|
SiTime
|
-20 TO 70C, 3225, 50PPM, 1.8V, 4 |
0.535 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 5032, 25PPM, 1.8V, 1 |
1.354 |
|
I roto i te taonga |
|
Energy Micro (Silicon Labs)
|
OSC XO 200.0000MHZ LVDS SMD |
32.425 |
|
I roto i te taonga |
|
CTS Electronic Components
|
OSC XO 50.0000MHZ LVPECL SMD |
3.177 |
|
I roto i te taonga |
|
IDT (Integrated Device Technology)
|
OSC XO 78.6432MHZ HCMOS SMD |
1.225 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 7050, 25PPM, 3.3V, 8 |
0.667 |
|
I roto i te taonga |
|
SiTime
|
OSC MEMS 150.0000MHZ LVDS SMD |
1.864 |
|
I roto i te taonga |
|
Abracon Corporation
|
OSC 1.05GHZ 2.5V LVDS SMD |
17.865 |
|
I roto i te taonga |
|
Abracon Corporation
|
OSC MEMS XO 19.6608MHZ ST |
1.227 |
|
I roto i te taonga |
|
Abracon Corporation
|
OSC 1.03GHZ 2.5V LVDS SMD |
16.416 |
|
I roto i te taonga |
|
Abracon Corporation
|
OSCILLATOR 8.192KHZ MEMS SMD |
1.017 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 5032, 20PPM, 1.8V, 1 |
1.528 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 7050, 20PPM, 3.3V, 4 |
1.006 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 2520, 50PPM, 3.0V, 3 |
0.554 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 2016, 20PPM, 2.5V, 2 |
0.916 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 3225, 25PPM, 2.25V-3 |
0.962 |
|
I roto i te taonga |
|
IDT (Integrated Device Technology)
|
OSC XO 36.000MHZ HCMOS SMD |
- |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 3225, 20PPM, 2.25V-3 |
1.952 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 2016, 25PPM, 3.0V, 4 |
0.586 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 5032, 50PPM, 2.8V, 2 |
0.58 |
|
I roto i te taonga |
|
Energy Micro (Silicon Labs)
|
VCXO; DIFF/SE; SINGLE FREQ; 0.1- |
4.031 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 7050, 25PPM, 2.5V, 2 |
2.05 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 5032, 10PPM, 2.8V, 1 |
3.921 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 5032, 10PPM, 2.8V, 7 |
3.208 |
|
I roto i te taonga |
|
Epson
|
OSC XO 36.000MHZ CMOS SMD |
0.99 |
|
I roto i te taonga |
|
Abracon Corporation
|
OSC 1.1GHZ 3.3V LVDS SMD |
17.865 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 3225, 20PPM, 2.8V, 3 |
1.553 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 5032, 20PPM, 1.8V, 7 |
1.839 |
|
I roto i te taonga |
|
IDT (Integrated Device Technology)
|
OSC XO 74.1758MHZ HCMOS SMD |
- |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 7050, 25PPM, 1.8V, 1 |
2.57 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 2520, 20PPM, 3.0V, 3 |
0.669 |
|
I roto i te taonga |
|
Abracon Corporation
|
OSC MEMS XO 33.3333MHZ ST |
1.44 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 2016, 20PPM, 1.8V, 6 |
0.615 |
|
I roto i te taonga |
|
Abracon Corporation
|
OSC MEMS XO 2.0800MHZ ST |
1.408 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 7050, 50PPM, 2.25V-3 |
1.652 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 5032, 20PPM, 2.8V, 7 |
1.839 |
|
I roto i te taonga |
|
Energy Micro (Silicon Labs)
|
VCXO; DIFF/SE; SINGLE FREQ; 0.1- |
3.367 |
|
I roto i te taonga |
|
IDT (Integrated Device Technology)
|
OSC XO 24.000MHZ HCMOS SMD |
- |
|
I roto i te taonga |
|
NDK
|
OSC OCXO 10MHZ 3.3V SMD |
79.799 |
|
I roto i te taonga |
|
SiTime
|
OSC XO 3.3V 75MHZ OE |
0.562 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 5032, 20PPM, 3.3V, 2 |
1.981 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 3225, 10PPM, 1.8V, 2 |
2.614 |
|
I roto i te taonga |
|
TXC Corporation
|
OSC MEMS 12.352MHZ CMOS SMD |
- |
|
I roto i te taonga |
|
SiTime
|
OSC MEMS 533.0000MHZ LVDS SMD |
3.305 |
|
I roto i te taonga |
|
TXC Corporation
|
OSC MEMS 19.44MHZ CMOS SMD |
- |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 2520, 50PPM, 2.5V, 3 |
0.535 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 2520, 25PPM, 2.25V-3 |
0.669 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 2520, 25PPM, 3.3V, 6 |
0.636 |
|
I roto i te taonga |
|
SiTime
|
-40 TO 85C, 5032, 10PPM, 2.5V, 1 |
2.339 |
|
I roto i te taonga |
|
SiTime
|
-20 TO 70C, 5032, 25PPM, 3.0V, 6 |
0.667 |
|
I roto i te taonga |